<p>The fundamental physical parameter of both bulk and low-dimensional semiconductor structures is the band gap <InlineEquation ID="IEq1"> <EquationSource Format="TEX">$\left({E}_{g}^{3d},{E}_{g}^{2d}\right)$</EquationSource> <EquationSource Format="MATHML"><math> <mfenced close=")" open="("> <msubsup> <mi>E</mi> <mrow> <mi>g</mi> </mrow> <mrow> <mn>3</mn> <mi>d</mi> </mrow> </msubsup> <mo>,</mo> <msubsup> <mi>E</mi> <mrow> <mi>g</mi> </mrow> <mrow> <mn>2</mn> <mi>d</mi> </mrow> </msubsup> </mfenced> </math></EquationSource> </InlineEquation>, whose energetic width allows the prediction of the operational parameters of semiconductor-based devices in advance. Therefore, the determination of <InlineEquation ID="IEq2"> <EquationSource Format="TEX">${E}_{g}^{3d}$</EquationSource> <EquationSource Format="MATHML"><math> <msubsup> <mi>E</mi> <mrow> <mi>g</mi> </mrow> <mrow> <mn>3</mn> <mi>d</mi> </mrow> </msubsup> </math></EquationSource> </InlineEquation> and <InlineEquation ID="IEq3"> <EquationSource Format="TEX">${E}_{g}^{2d}$</EquationSource> <EquationSource Format="MATHML"><math> <msubsup> <mi>E</mi> <mrow> <mi>g</mi> </mrow> <mrow> <mn>2</mn> <mi>d</mi> </mrow> </msubsup> </math></EquationSource> </InlineEquation> (in cases where the band gap of newly synthesized materials is not known) is considered one of the primary tasks in semiconductor heterostructure technology. Furthermore, another important feature of <InlineEquation ID="IEq4"> <EquationSource Format="TEX">${E}_{g}$</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>E</mi> <mi>g</mi> </msub> </math></EquationSource> </InlineEquation> is its strong sensitivity to external influences. Indeed, variations in <InlineEquation ID="IEq5"> <EquationSource Format="TEX">${E}_{g}$</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>E</mi> <mi>g</mi> </msub> </math></EquationSource> </InlineEquation> resulting from such effects can fundamentally alter the physical and chemical properties of semiconductor devices.</p>

Magnetic field and temperature dependent band gap modeling in narrow-gap quantum well semiconductors

期刊论文
发表日期：

2026年4月13日

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Ulugbek Erkaboev,
Rustamjon Rakhimov,
Jasurbek Mirzaev,
Nozimjon Sayidov,
Muzaffar Dadamirzaev,
Qudratali Temirov

摘要

The fundamental physical parameter of both bulk and low-dimensional semiconductor structures is the band gap $\left({E}_{g}^{3d},{E}_{g}^{2d}\right)$ $(E_{g}^{3 d}, E_{g}^{2 d})$ , whose energetic width allows the prediction of the operational parameters of semiconductor-based devices in advance. Therefore, the determination of ${E}_{g}^{3d}$ $E_{g}^{3 d}$ and ${E}_{g}^{2d}$ $E_{g}^{2 d}$ (in cases where the band gap of newly synthesized materials is not known) is considered one of the primary tasks in semiconductor heterostructure technology. Furthermore, another important feature of ${E}_{g}$ $E_{g}$ is its strong sensitivity to external influences. Indeed, variations in ${E}_{g}$ $E_{g}$ resulting from such effects can fundamentally alter the physical and chemical properties of semiconductor devices.