Scholarlink

<p>Resistive random access memories (RRAMs) have unique switching characteristics and promising applications in large-scale memory storage and neural networks. In this study, a Ti/ZrO<sub>2</sub>/ZrO<sub><i>x</i></sub>/Pt RRAM structure was constructed, and a current modulation layer (CML) was inserted to improve the forming process. Simulation results show that the device with CML(CML/Ti/ZrO<sub>2</sub>/ZrO<sub><i>x</i></sub>/Pt) has almost no interference from electric field or thermal effects, and the forming processes of the conductive filaments (CFs) can be controlled by varying the compliance current, which effectively prevents the generation of overshoot current, leading to improved switching characteristics. Additionally, multilevel storage capability can be realized by regulating the compliance current during reset operations, which demonstrates the applications in the field of low-power and high-density storage.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Performance optimization in ZrOx-based RRAM devices with current modulation layer

  • 期刊论文

  • 发表日期：

    2026年4月2日

查看全文
  • Fei Yang,
  • Yujie Xie,
  • Junlong Liu,
  • Houwei Zhu,
  • Yixiang Cheng,
  • Qingsong Shu,
  • Xuanyang Zhao

摘要

Resistive random access memories (RRAMs) have unique switching characteristics and promising applications in large-scale memory storage and neural networks. In this study, a Ti/ZrO2/ZrOx/Pt RRAM structure was constructed, and a current modulation layer (CML) was inserted to improve the forming process. Simulation results show that the device with CML(CML/Ti/ZrO2/ZrOx/Pt) has almost no interference from electric field or thermal effects, and the forming processes of the conductive filaments (CFs) can be controlled by varying the compliance current, which effectively prevents the generation of overshoot current, leading to improved switching characteristics. Additionally, multilevel storage capability can be realized by regulating the compliance current during reset operations, which demonstrates the applications in the field of low-power and high-density storage.