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<p>This study presents an innovative method for augmenting the performance of the β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> heterostructure field-effect transistor (HFET) by overlaying an AlN/Si<sub>3</sub>N<sub>4</sub> bi-layer. Owing to its excellent thermal conductivity, the AlN film is a suitable contender for use as a heat spreader. The temperature of the device during operation is a crucial factor in minimizing damage and ensuring high-quality performance. This research compares the electrical characteristics of a conventional Si<sub>3</sub>N<sub>4</sub> passivated HFET with a proposed one comprising AlN/Si<sub>3</sub>N<sub>4</sub> bi-layer. For the suggested device a 14% lower quasi-steady state temperature is achieved. The device with AlN/Si<sub>3</sub>N<sub>4</sub> layer as a heat spreader exhibits a transconductance peak of 78 mS/mm and a notable 64% increase in drain current compared to the Si<sub>3</sub>N<sub>4</sub> passivated device. Furthermore, there is a significant 32% increment in cut-off frequency compared to the conventional passivated one.</p>

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Thermal stabilization enhancement of β-(AlxGa1-x)2O3/Ga2O3 HFET through incorporated AlN/Si3N4 heat spreader layer

  • 期刊论文

  • 发表日期：

    2026年3月20日

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  • Esmaeil Masroor,
  • Masoud Abrari,
  • Majid Ghanaatshoar,
  • Seyed Majid Mohseni,
  • Shahab Sharifi Malvajerdi

摘要

This study presents an innovative method for augmenting the performance of the β-(AlxGa1-x)2O3/Ga2O3 heterostructure field-effect transistor (HFET) by overlaying an AlN/Si3N4 bi-layer. Owing to its excellent thermal conductivity, the AlN film is a suitable contender for use as a heat spreader. The temperature of the device during operation is a crucial factor in minimizing damage and ensuring high-quality performance. This research compares the electrical characteristics of a conventional Si3N4 passivated HFET with a proposed one comprising AlN/Si3N4 bi-layer. For the suggested device a 14% lower quasi-steady state temperature is achieved. The device with AlN/Si3N4 layer as a heat spreader exhibits a transconductance peak of 78 mS/mm and a notable 64% increase in drain current compared to the Si3N4 passivated device. Furthermore, there is a significant 32% increment in cut-off frequency compared to the conventional passivated one.