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<p>A novel structure of Low Barrier Schottky contact Super Barrier Rectifier (LB-SSBR) is proposed by introducing a partial SiGe region in the device’s anode side, creating a low electron-barrier structure. This low-barrier structure ensures that LB-SSBR can appropriately thicken the oxide layer without affecting the forward conduction characteristics, thereby improving the Single Event Gate Rupture (SEGR) tolerance. The TCAD simulation results show that, under the condition of no increase in reverse leakage current, the SEGR tolerance of LB-SSBR is significantly stronger than that of conventional SSBR. When heavy ions are incident from the most sensitive position of the device, the maximum electric field inside the oxide layer of LB-SSBR is 7.22 MV/cm, which is 46.08% lower than that of SSBR. Additionally, there is also a certain degree of improvement in both forward conduction and reverse recovery characteristics. The forward conduction voltage of LB-SSBR has decreased by 13.44%, and the reverse recovery charge of LB-SSBR has reduced by 38.34% compared to SSBR. In addition, the existing molecular-beam epitaxy (MBE) process can achieve the epitaxy of SiGe on Si substrate, making it convenient to prepare LB-SSBR structures.</p>

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A novel low barrier Schottky contact super barrier rectifier structure for improving single-event gate rupture tolerance

  • 期刊论文

  • 发表日期：

    2025年12月21日

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  • Qisheng Yu,
  • Wensuo Chen,
  • Jiaweiwen Huang,
  • Zhigang Shen,
  • Aohang Zhang,
  • Jian Li

摘要

A novel structure of Low Barrier Schottky contact Super Barrier Rectifier (LB-SSBR) is proposed by introducing a partial SiGe region in the device’s anode side, creating a low electron-barrier structure. This low-barrier structure ensures that LB-SSBR can appropriately thicken the oxide layer without affecting the forward conduction characteristics, thereby improving the Single Event Gate Rupture (SEGR) tolerance. The TCAD simulation results show that, under the condition of no increase in reverse leakage current, the SEGR tolerance of LB-SSBR is significantly stronger than that of conventional SSBR. When heavy ions are incident from the most sensitive position of the device, the maximum electric field inside the oxide layer of LB-SSBR is 7.22 MV/cm, which is 46.08% lower than that of SSBR. Additionally, there is also a certain degree of improvement in both forward conduction and reverse recovery characteristics. The forward conduction voltage of LB-SSBR has decreased by 13.44%, and the reverse recovery charge of LB-SSBR has reduced by 38.34% compared to SSBR. In addition, the existing molecular-beam epitaxy (MBE) process can achieve the epitaxy of SiGe on Si substrate, making it convenient to prepare LB-SSBR structures.