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<p>Negative differential resistance (NDR) devices are pivotal to the development of high-performance oscillators, where a well-defined peak-to-valley voltage difference (ΔV) enables high cut-off frequencies and ultra-low-power operation. However, engineering NDR devices with suitably low ΔV remains a persistent challenge. In this work, we present a simulation-driven design of an organic–inorganic hybrid NDR device with a multilayer heterostructure comprising ITO/Polyphenylene Vinylene (PPV)/Fullerene-C60: ZnO quantum wells/Al, modelled using SILVACO TCAD. The device exhibits distinctive multi-peak I–V characteristics, with peak-to-valley current ratios of 3.1 and 1.7, governed by donor-like trap states and resonant tunnelling transport. Remarkably, the structure achieves an ultra-low ΔV of ~ 0.05&#xa0;V—an order of magnitude lower than previously reported values—highlighting its potential as a disruptive candidate for low-power, tunable, and high-frequency nanoelectronic applications.</p>

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High-performance organic–inorganic hybrid NDR devices: simulation of ultra-low-voltage operation for low-power applications

  • 期刊论文

  • 发表日期：

    2025年11月7日

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  • Brahmaiah Battula,
  • Bijit Choudhuri,
  • V V Ramana CH

摘要

Negative differential resistance (NDR) devices are pivotal to the development of high-performance oscillators, where a well-defined peak-to-valley voltage difference (ΔV) enables high cut-off frequencies and ultra-low-power operation. However, engineering NDR devices with suitably low ΔV remains a persistent challenge. In this work, we present a simulation-driven design of an organic–inorganic hybrid NDR device with a multilayer heterostructure comprising ITO/Polyphenylene Vinylene (PPV)/Fullerene-C60: ZnO quantum wells/Al, modelled using SILVACO TCAD. The device exhibits distinctive multi-peak I–V characteristics, with peak-to-valley current ratios of 3.1 and 1.7, governed by donor-like trap states and resonant tunnelling transport. Remarkably, the structure achieves an ultra-low ΔV of ~ 0.05 V—an order of magnitude lower than previously reported values—highlighting its potential as a disruptive candidate for low-power, tunable, and high-frequency nanoelectronic applications.