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<p>Hydrogen sensors utilizing field-effect transistors (FETs) have been extensively researched in the past few decades. Silicon-based H<sub>2</sub> gas sensors have shown excellent performances. The next generation sensing and computing technologies demand scaling of semiconductor devices for high-density integration and inclusive performance enhancement. However, the dangling bonds and high surface scattering of silicon have restricted its application in an ultra-scaled domain. Thus, in this article, we propose an electrically doped MoTe<sub>2</sub>-based H<sub>2</sub> gas sensor. We have used an analytical model to capture variation of work function with gas pressure. Next, technology computer-aided design (TCAD) tools are adopted to investigate the device performance. To understand the quantum transport in sub-10&#xa0;nm MoTe<sub>2</sub> channel, non-equilibrium green’s function (NEGF) method is deployed. The study exhibits the high potentiality of electrically doped 2D material like MoTe<sub>2</sub>-based H<sub>2</sub> sensors which may spur future experiments.</p>

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NEGF-based investigation of electrically doped few layer MoTe2 H2 gas sensor

  • 期刊论文

  • 发表日期：

    2025年11月1日

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  • Sharmistha Shee Kanrar,
  • Abir Jana,
  • Arpan De,
  • Bhaskar Gupta,
  • Subir Kumar Sarkar

摘要

Hydrogen sensors utilizing field-effect transistors (FETs) have been extensively researched in the past few decades. Silicon-based H2 gas sensors have shown excellent performances. The next generation sensing and computing technologies demand scaling of semiconductor devices for high-density integration and inclusive performance enhancement. However, the dangling bonds and high surface scattering of silicon have restricted its application in an ultra-scaled domain. Thus, in this article, we propose an electrically doped MoTe2-based H2 gas sensor. We have used an analytical model to capture variation of work function with gas pressure. Next, technology computer-aided design (TCAD) tools are adopted to investigate the device performance. To understand the quantum transport in sub-10 nm MoTe2 channel, non-equilibrium green’s function (NEGF) method is deployed. The study exhibits the high potentiality of electrically doped 2D material like MoTe2-based H2 sensors which may spur future experiments.