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<p>The modeling of ion-sensitive field-effect transistors (ISFETs) for pH biosensing applications using a commercial Technology Computer-Aided Design (TCAD) tool has been investigated in this study. A comparative analysis was conducted to evaluate the effect of various high-k inorganic gate materials—SiO₂, Al₂O₃, Si₃N₄, ZrO₂, and Ta₂O₅—as pH-sensitive films on device performance. These materials were selected for their potential to enhance ISFET sensitivity and stability, in contrast to the conventional silicon dioxide (SiO₂) gate layer. To avoid the high cost of physical fabrication, TCAD simulation was employed as an effective and economical alternative for device development and performance evaluation. Simulation results were validated against published experimental data, confirming that ISFETs incorporating high-k materials exhibit superior sensitivity and stability compared to those using SiO₂. A key innovation in this work is the reintroduction and analysis of the site-binding electrolyte model, which is currently not available in standard TCAD platforms but is critical for accurately modeling biosensor behavior in electrolyte environments. The simulation demonstrated that Al₂O₃ and Ta₂O₅ exhibited the highest sensitivity at 59.2&#xa0;mV/pH, followed closely by ZrO₂ at 59.0&#xa0;mV/pH, significantly outperforming the conventional SiO₂ layer (44.6&#xa0;mV/pH) across a wide pH range (approximately 1–13).</p>

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Modeling and performance analysis of high-k gate material-based isfet biosensors using TCAD

  • 期刊论文

  • 发表日期：

    2025年10月6日

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  • Phuritshabam Zenita,
  • A. Balarampyari Devi,
  • Khomdram Jolson Singh,
  • N. Basanta Singh

摘要

The modeling of ion-sensitive field-effect transistors (ISFETs) for pH biosensing applications using a commercial Technology Computer-Aided Design (TCAD) tool has been investigated in this study. A comparative analysis was conducted to evaluate the effect of various high-k inorganic gate materials—SiO₂, Al₂O₃, Si₃N₄, ZrO₂, and Ta₂O₅—as pH-sensitive films on device performance. These materials were selected for their potential to enhance ISFET sensitivity and stability, in contrast to the conventional silicon dioxide (SiO₂) gate layer. To avoid the high cost of physical fabrication, TCAD simulation was employed as an effective and economical alternative for device development and performance evaluation. Simulation results were validated against published experimental data, confirming that ISFETs incorporating high-k materials exhibit superior sensitivity and stability compared to those using SiO₂. A key innovation in this work is the reintroduction and analysis of the site-binding electrolyte model, which is currently not available in standard TCAD platforms but is critical for accurately modeling biosensor behavior in electrolyte environments. The simulation demonstrated that Al₂O₃ and Ta₂O₅ exhibited the highest sensitivity at 59.2 mV/pH, followed closely by ZrO₂ at 59.0 mV/pH, significantly outperforming the conventional SiO₂ layer (44.6 mV/pH) across a wide pH range (approximately 1–13).