<p>As interest in advanced nanodevices grows, incorporating interband coupling effects becomes crucial for obtaining accurate and physically meaningful results when analyzing transport phenomena. This study presents a novel approach that combines the multi-band envelope function model with the discontinuous Galerkin method, resulting in an efficient algorithm tailored for simulating interband kinetics. Our method achieves a relative <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10825_2025_2398_Article_IEq1.gif" Format="GIF" Height="14" Rendition="HTML" Resolution="72" Type="Linedraw" Width="26" /> </InlineMediaObject> <EquationSource Format="TEX">\(L^\infty\)</EquationSource> <EquationSource Format="MATHML"><math> <msup> <mi>L</mi> <mi>∞</mi> </msup> </math></EquationSource> </InlineEquation> error that is <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10825_2025_2398_Article_IEq2.gif" Format="GIF" Height="14" Rendition="HTML" Resolution="72" Type="Linedraw" Width="18" /> </InlineMediaObject> <EquationSource Format="TEX">\(40\;\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>40</mn> <mspace width="0.277778em" /> </mrow> </math></EquationSource> </InlineEquation>% lower than traditional finite difference schemes while maintaining comparable runtime. Furthermore, numerical experiments confirm the improved convergence behavior of the proposed algorithm, particularly for simulations of resonant interband tunneling diodes.</p>

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Efficient quantum transport simulations in nanodevices using multi-band discontinuous Galerkin methods

  • Valmir Ganiu,
  • Dirk Schulz

摘要

As interest in advanced nanodevices grows, incorporating interband coupling effects becomes crucial for obtaining accurate and physically meaningful results when analyzing transport phenomena. This study presents a novel approach that combines the multi-band envelope function model with the discontinuous Galerkin method, resulting in an efficient algorithm tailored for simulating interband kinetics. Our method achieves a relative \(L^\infty\) L error that is \(40\;\) 40 % lower than traditional finite difference schemes while maintaining comparable runtime. Furthermore, numerical experiments confirm the improved convergence behavior of the proposed algorithm, particularly for simulations of resonant interband tunneling diodes.