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<p>In this work, an electric field-tuned strategy based on dual-atom doping is proposed to achieve precise control of spin-dependent thermoelectric transport in SiC nanoribbons (SiCNRs), using first-principles calculations. The study reveals that dual-atom doping at specific sites of zigzag SiCNRs can regulate spin-dependent transmission coefficients, leading to the emergence of “X"-shaped transmission spectra near the Fermi level. Under this condition, the two spin channels exhibit pronounced opposite signs in their Seebeck coefficients, inducing spin-polarized currents with opposite flow directions. By applying a gate voltage to the central scattering region, the density of states distribution in the doped system can be precisely modulated, thereby enabling a pronounced spin Seebeck effect. The spin Seebeck coefficient reaches a remarkable value of 225&#xa0;µV/K, significantly surpassing that of conventional doped SiC nanoribbons(<InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10825_2025_2393_Article_IEq2.gif" Format="GIF" Height="6" Rendition="HTML" Resolution="72" Type="Linedraw" Width="17" /> </InlineMediaObject> <EquationSource Format="TEX">\(\sim\)</EquationSource> <EquationSource Format="MATHML"><math> <mo>∼</mo> </math></EquationSource> </InlineEquation>100&#xa0;µV/K) and edge-doped graphene nanoribbons(<InlineEquation ID="IEq4"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10825_2025_2393_Article_IEq2.gif" Format="GIF" Height="6" Rendition="HTML" Resolution="72" Type="Linedraw" Width="17" /> </InlineMediaObject> <EquationSource Format="TEX">\(\sim\)</EquationSource> <EquationSource Format="MATHML"><math> <mo>∼</mo> </math></EquationSource> </InlineEquation>150&#xa0;µV/K). This dual-atom doping strategy establishes a new paradigm for designing room-temperature spin caloritronic devices with programmable spin current configurations.</p>

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Electric field-tuned spin Seebeck effect in doped SiC nanoribbons

  • 期刊论文

  • 发表日期：

    2025年8月5日

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  • JiangXue Huang,
  • HongQiao Su,
  • Jin He,
  • QiJun Huang,
  • Hao Wang,
  • Sheng Chang

摘要

In this work, an electric field-tuned strategy based on dual-atom doping is proposed to achieve precise control of spin-dependent thermoelectric transport in SiC nanoribbons (SiCNRs), using first-principles calculations. The study reveals that dual-atom doping at specific sites of zigzag SiCNRs can regulate spin-dependent transmission coefficients, leading to the emergence of “X"-shaped transmission spectra near the Fermi level. Under this condition, the two spin channels exhibit pronounced opposite signs in their Seebeck coefficients, inducing spin-polarized currents with opposite flow directions. By applying a gate voltage to the central scattering region, the density of states distribution in the doped system can be precisely modulated, thereby enabling a pronounced spin Seebeck effect. The spin Seebeck coefficient reaches a remarkable value of 225 µV/K, significantly surpassing that of conventional doped SiC nanoribbons( \(\sim\) ∼ 100 µV/K) and edge-doped graphene nanoribbons( \(\sim\) ∼ 150 µV/K). This dual-atom doping strategy establishes a new paradigm for designing room-temperature spin caloritronic devices with programmable spin current configurations.