Design and application of high-frequency floating and grounding memristor emulator based on MOS transistor
摘要
There are many factors to consider when designing a memristor emulator, such as circuit structure complexity, floating or grounding, frequency range, consumption, etc. It is difficult to optimize the overall performance although emulators reported have already improved in some aspects. Therefore, a CMOS-based memristor emulator circuit is proposed. The whole circuit structure of the new one is simple. Simulations of it conducted using 130nm CMOS process parameters in the Cadence Analog Environment show distinct hysteresis loop characteristics. The experimental results of the emulator circuit built on the breadboard using commercial components keep the pitched hysteresis characteristics. The proposed one can be connected to both floating and grounding structures, and the operating frequency of the floating connection can reach 20MHz. The simulation results of the combination logic circuits and the sequential ones designed based on the new memristor emulator also demonstrate its functionality.