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<p>Graphene field effect transistors (GFETs) have gained considerable attention in recent years for their exceptional electronic properties and potential applications in various fields, including radiation detection. This study presents a comprehensive simulation-based investigation of GFETs as radiation detectors. The primary objective of this research is to evaluate the feasibility, optical and electrical characteristics of GFETs as radiation detectors compared to traditional semiconductor-based detectors. Graphene’s exceptional charge carrier mobility and sensitivity to charge variations make it an attractive candidate for radiation detection. The simulations include the generation of electron–hole pairs due to incident radiation, the transport of electrons and holes within the graphene channel, their impact on the electrical characteristics of the GFET, and different types of radiation-induced effects on the absorber material and the device. The study begins with the design and modeling of GFET structures using COMSOL Multiphysics, taking into account parameters such as channel length, gate voltage, and graphene quality. Electrical characteristics, including current–voltage (I–V) characteristics and field effect on graphene due to irradiation, are extracted from the simulations to evaluate GFET performance. Furthermore, the optical characteristics of GFETs are investigated using LUMERICAL, focusing on their absorption and recombination properties when subjected to radiation. The radiation effects are incorporated into the device simulation using CASINO and SRIM tools. These tools facilitate the assessment of radiation-induced defect and ion generation and subsequent charge transport within the GFET channel. The impact of various incident radiation types, such as electrons and alpha rays, proton radiation, and heavy ion radiation, on the device is systematically analyzed. In conclusion, this study presents a thorough simulation-based investigation of GFETs as radiation detectors, highlighting their exceptional potential in radiation detection applications. The insights gained from these simulations can guide the development and optimization of graphene-based radiation detectors, paving the way for enhanced radiation detection capabilities in various fields.</p>

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Analysis of optical and electrical properties of graphene field effect transistors for radiation detection

  • 期刊论文

  • 发表日期：

    2025年6月9日

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  • Sheo K. Mishra,
  • N. Sooraj,
  • Ashish Singh,
  • S. Kavitha,
  • Himanshu Singh

摘要

Graphene field effect transistors (GFETs) have gained considerable attention in recent years for their exceptional electronic properties and potential applications in various fields, including radiation detection. This study presents a comprehensive simulation-based investigation of GFETs as radiation detectors. The primary objective of this research is to evaluate the feasibility, optical and electrical characteristics of GFETs as radiation detectors compared to traditional semiconductor-based detectors. Graphene’s exceptional charge carrier mobility and sensitivity to charge variations make it an attractive candidate for radiation detection. The simulations include the generation of electron–hole pairs due to incident radiation, the transport of electrons and holes within the graphene channel, their impact on the electrical characteristics of the GFET, and different types of radiation-induced effects on the absorber material and the device. The study begins with the design and modeling of GFET structures using COMSOL Multiphysics, taking into account parameters such as channel length, gate voltage, and graphene quality. Electrical characteristics, including current–voltage (I–V) characteristics and field effect on graphene due to irradiation, are extracted from the simulations to evaluate GFET performance. Furthermore, the optical characteristics of GFETs are investigated using LUMERICAL, focusing on their absorption and recombination properties when subjected to radiation. The radiation effects are incorporated into the device simulation using CASINO and SRIM tools. These tools facilitate the assessment of radiation-induced defect and ion generation and subsequent charge transport within the GFET channel. The impact of various incident radiation types, such as electrons and alpha rays, proton radiation, and heavy ion radiation, on the device is systematically analyzed. In conclusion, this study presents a thorough simulation-based investigation of GFETs as radiation detectors, highlighting their exceptional potential in radiation detection applications. The insights gained from these simulations can guide the development and optimization of graphene-based radiation detectors, paving the way for enhanced radiation detection capabilities in various fields.