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<p>This study explores the impact of the piezotronic effect on the performance of a ZnO nanorod/n-MoS<sub>2</sub>/i-MoS<sub>2</sub>/p-Si photovoltaic nano-heterostructure for achieving high-efficiency energy harvesting. We aimed to optimize the thickness of each layer in the piezo-photoelectric physical model to improve the J–V characteristics and energy band alignment. We found that a thickness of 5&#xa0;nm for n-MoS<sub>2</sub> and 100&#xa0;nm for ZnO NR, and the doping concentration led to the highest photoconversion efficiency of 28.08%. This configuration generated piezocharges at the ZnO/MoS<sub>2</sub> interfaces under applied strain ranging from − 1% to 1. This structure has potential for developing high-efficiency solar cells.</p>

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Piezotronics-enabled performance enhancement in ZnONR/n-MoS2/i-MoS2/p-Si photovoltaics

  • 期刊论文

  • 发表日期：

    2025年6月4日

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  • K. Rathnakannan,
  • R. Parasuraman

摘要

This study explores the impact of the piezotronic effect on the performance of a ZnO nanorod/n-MoS2/i-MoS2/p-Si photovoltaic nano-heterostructure for achieving high-efficiency energy harvesting. We aimed to optimize the thickness of each layer in the piezo-photoelectric physical model to improve the J–V characteristics and energy band alignment. We found that a thickness of 5 nm for n-MoS2 and 100 nm for ZnO NR, and the doping concentration led to the highest photoconversion efficiency of 28.08%. This configuration generated piezocharges at the ZnO/MoS2 interfaces under applied strain ranging from − 1% to 1. This structure has potential for developing high-efficiency solar cells.