<p>The influence of different layer thicknesses in a multi-quantum well light-emitting diode can provide valuable insights for optimizing device performance. This study examines the impact of cladding layer thickness on the performance of InAsPSb/InGaAs multi-quantum well light-emitting diodes. Simulations were conducted to analyze various characteristics, including band diagrams, energy transition levels, J-V curves, IQEs, output powers, and electric field distributions for top and bottom cladding layers ranging from 100 to 500 nm. The results indicate that increasing the cladding thickness reduces the turn-on voltage by 16% and slightly decreases the series resistance by 4% while significantly enhancing the IQE by 35% when the cladding layers increase from 100 to 500 nm. However, output power decreases by 26% with increasing cladding thickness. Thicker cladding layers reduce electric field strength, highlighting trade-offs between IQE and output power. Finally, the role of the radiative and non-radiative recombination types in these variations was explored. This study demonstrates that optimizing the cladding layer thickness can enhance device efficiency by mitigating non-radiative recombination while balancing current flow.</p>