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<p>Silicon carbide (SiC) double-gate metal oxide semiconductor field-effect transistors (DG MOSFETs) have attracted significant attention due to their ideal high-temperature characteristics and radiation resistance. Therefore, it is meaningful to exploit an I-V model for SiC DG MOSFETs. In this article, we make a linear approximation to describe the relationship between the surface mobile charge density and the surface electron concentration of the device. To determine the proportionality constant based on the solution of the one-dimensional Poisson’s equation in the subthreshold region of the device, we derived a functional relationship between the surface mobile charge density in the channel and the channel quasi-Fermi potential. Then, we successfully developed a unified I-V model for the SiC DG MOSFETs. Based on the virtual gate assumption, the model has been extended to SOI (SiC-On-Insulator) structures. By comparing our model with the results from the two-dimensional numerical simulation software Silvaco Atlas, our model’s calculations closely match the two-dimensional numerical simulation results from the subthreshold region to the inversion region. This model has significance for SiC DG MOSFETs for high-temperature electronic circuit.</p>

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A unified I-V model of SiC double-gate MOSFETs

  • 期刊论文

  • 发表日期：

    2025年4月30日

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  • Yi Li,
  • Tao Zhou,
  • Zixuan Guo,
  • Yuqiu Yang,
  • Junyao Wu,
  • Huan Cai,
  • Jun Wang,
  • Jungang Yin,
  • Qin Liu,
  • Linfeng Deng

摘要

Silicon carbide (SiC) double-gate metal oxide semiconductor field-effect transistors (DG MOSFETs) have attracted significant attention due to their ideal high-temperature characteristics and radiation resistance. Therefore, it is meaningful to exploit an I-V model for SiC DG MOSFETs. In this article, we make a linear approximation to describe the relationship between the surface mobile charge density and the surface electron concentration of the device. To determine the proportionality constant based on the solution of the one-dimensional Poisson’s equation in the subthreshold region of the device, we derived a functional relationship between the surface mobile charge density in the channel and the channel quasi-Fermi potential. Then, we successfully developed a unified I-V model for the SiC DG MOSFETs. Based on the virtual gate assumption, the model has been extended to SOI (SiC-On-Insulator) structures. By comparing our model with the results from the two-dimensional numerical simulation software Silvaco Atlas, our model’s calculations closely match the two-dimensional numerical simulation results from the subthreshold region to the inversion region. This model has significance for SiC DG MOSFETs for high-temperature electronic circuit.