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<p>In this article, we simulated the Interdigitated Back Contact (IBC) solar cell using Quokka3 simulation, highlighting a detailed approach to front and back passivation and sheet resistance that significantly enhances cell performance. The antireflective coating (ARC) and the front passivation layer, after fine-tuning variation of recombination current density <i>J</i><sub>0</sub> (fA/cm<sup>2</sup>), dictate the recombination losses at these interfaces, therefore playing a critical role on cell efficiency. The&#xa0;rear passivation layer complements the front in mitigating recombination to optimize light capture within the silicon wafer. When the emitter fraction is approximately 40% at 100 Ω/Sq, the&#xa0;rear boron sheet resistance showed the enhanced <i>V</i><sub>oc</sub>, <i>J</i><sub>sc</sub>, FF, and η as 719.2&#xa0;mV, 41.66&#xa0;mA/cm<sup>2</sup>, 84.71%, and 25.2%. These results demonstrate how <i>J</i><sub>0</sub> and rear boron area variability, influenced by both front and back passivation, affects the FF and η of the IBC cell. Furthermore, variations in the bulk lifetime of crystalline silicon (c-Si), resistivity of the wafer, and rear boron sheet resistance (<i>R</i><sub>sh</sub>) offer pathways to improve overall cell performance.</p>

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Improved passivation and antireflection techniques for higher-efficiency Interdigitated Back Contact (IBC) solar cells

  • 期刊论文

  • 发表日期：

    2025年2月23日

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  • Alamgeer,
  • Muhammad Quddamah Khokhar,
  • Hasnain Yousuf,
  • Rafi Ur Rahman,
  • Polgampola Chamani Madara,
  • Mengmeng Chu,
  • Muhammad Tahir,
  • Sangheon Park,
  • Junsin Yi

摘要

In this article, we simulated the Interdigitated Back Contact (IBC) solar cell using Quokka3 simulation, highlighting a detailed approach to front and back passivation and sheet resistance that significantly enhances cell performance. The antireflective coating (ARC) and the front passivation layer, after fine-tuning variation of recombination current density J0 (fA/cm2), dictate the recombination losses at these interfaces, therefore playing a critical role on cell efficiency. The rear passivation layer complements the front in mitigating recombination to optimize light capture within the silicon wafer. When the emitter fraction is approximately 40% at 100 Ω/Sq, the rear boron sheet resistance showed the enhanced Voc, Jsc, FF, and η as 719.2 mV, 41.66 mA/cm2, 84.71%, and 25.2%. These results demonstrate how J0 and rear boron area variability, influenced by both front and back passivation, affects the FF and η of the IBC cell. Furthermore, variations in the bulk lifetime of crystalline silicon (c-Si), resistivity of the wafer, and rear boron sheet resistance (Rsh) offer pathways to improve overall cell performance.