Highly doped and optimized 5-nm GAA CNTFET with different perspectives
摘要
The invention of new transistors and their channel length reduction are challenging processes. The carbon nanotube field-effect transistor (CNTFET), especially the gate-all-around (GAA) type, is an encouraging technology to solve the short channel effect. In this paper, changing doping concentration and finding the best coordination for contacts and spacer are promising approaches that are discussed. A highly doped 5 nm GAA CNTFET is presented and its functionality is evaluated in the device, layout, and circuit states. By the Monte Carlo method, the best structure coordination of drain and source contacts, spacer, width, and height are extracted. The device is evaluated for different supply voltages and the best voltage for its operation is 0.5 V. The concentration of dopants for n-type devices is found to be ND0 = 1 × 1021 cm−3 and NA = 1 × 1018 cm−3 for the donor and acceptor, respectively, and for the p-type, NA and ND0 are replaced. Also, the Ion/IOFF ratio of n-type and p-type are 2.3 × 104 and 1.6 × 104, respectively, which are achieved by double optimization. The optimized devices are implemented in an inverter. The resulting noise margin of the inverter demonstrates its high accuracy. The customized device is a qualified candidate for sophisticated structures.