Material-driven optimization of CdTe/gold interfaces to boost NIR performance in nanostructured solar cells
摘要
This study investigates the optimization of the near-infrared (NIR) performance of CdS/CdTe nanowall-based solar cells through strategic engineering of the CdTe/gold interface. The effect of including various materials, including lead telluride (PbTe), lead sulfide (PbS), germanium telluride (GeTe), molybdenum ditelluride (MoTe2), copper telluride (Cu₂Te), and tin telluride (SnTe), has been studied using the device physics-based simulations TCAD software Silvaco. The effect of these materials on NIR absorption and charge carrier dynamics is evaluated through in-depth simulations of current–voltage characteristics, internal quantum efficiency (IQE), and energy band diagrams. Our results reveal that MoTe2 offers the optimal trade-off between IQE and key photovoltaic parameters, exhibiting superior performance across a broad spectral range, with particular excellence in the NIR region. The study reveals the pivotal role of heterojunction types formed at the CdTe/interfacial material interface on device performance. This study reveals critical material-performance relationships in nanostructured solar cells, offering a valuable insight to aid in optimizing NIR response for the development of advanced photovoltaics.