Quantum transport properties of a double-barrier quantum well structure based on V-cut edge-patterned armchair graphene nanoribbon

A double-barrier quantum well is created using a larger band gap V-cut modified armchair graphene nanoribbon (AGNR) for the barrier region and a pristine AGNR with a smaller bandgap for the channel region. The numerical non-equilibrium Green’s function (NEGF) method, based on the pi-orbital tight-binding model, is employed to study the quantum transport properties of the device. The effects of various dimensional parameters, such as contact width, channel length, and distance between V-cuts in the barrier region, are investigated. The plot of the local density of states (LDOS) shows the formation of a single quantized quasi-energy state in the channel region, corresponding to a peak in transmission. The V–I characteristics of the device exhibit negative differential resistance (NDR) regions for a certain range of bias values. This device’s resonant tunneling performance parameters are compared with those of a similar, previously reported structure.