A simulation study of electrostatically doped silicene and graphene nanoribbon FETs

This paper evaluates the performance of electrostatic-doped silicene nanoribbon field-effect transistors (ED SiNR-FET) and graphene nanoribbon field-effect transistors (ED GNR-FET) through quantum-based electron transport simulations. It assesses the impact of ribbon widths and device geometry, revealing that ED SiNR-FET generally outperforms ED GNR-FET, particularly in terms of resistance to impurities and short-channel effects. The study identifies optimal ribbon widths for superior performance and introduces the extended channel ED (ECED) structure, which significantly enhances the I_ON/I_OFF ratio to 3.8 × 10⁵ in SiNR-FET compared to 3.9 × 10³ in GNR-FET for 15 nm devices. Additionally, analyses of ECED SiNR-FETs and ECED GNR-FET across various channel and gate lengths suggest that ECED devices are suitable for low-power and high-performance applications, with the ECED SiNR-FET displaying excellent subthreshold swing (SS) of 64 mV/dec and high transconductance (g_m) of 63 µS. This research confirms the advanced performance of SiNR-FETs over GNR-FETs and the potential of ECED SiNR-FETs in diverse applications.