Performance analysis of CsPbI₃-based solar cells under light emitting diode illumination as an energy harvester for IoT and indoor photovoltaics

Internet of things (IoT) has necessitated the development of indoor photovoltaics to enable a web of self-powered wireless sensors/nodes. We analysed a CsPbI₃ wide band gap perovskite for indoor photovoltaic application. An Indoor photovoltaic (IPV) device based on CsPbI₃ showed a theoretical efficiency of 51.5% at a band gap of 1.8 eV under indoor light-emitting diode (LED) illumination. This high efficiency is due to better capture of the narrow emission spectrum of LED by a high band gap CsPbI₃ absorber. Under low luminance of indoor light sources, there is a low density of photogenerated carriers, which increases the ratio of trapped electrons to photogenerated electrons. The low photogenerated carrier density lowered bulk recombination, and the high trapped electrons to photogenerated electrons ratio increases IPV sensitivity toward interfacial recombination. Finally, the device optimization strategies of the IPV device, distinct from outdoor illumination devices are highlighted.