Small-signal non-quasi-static model of a multi-fin FinFET for analog and linearity analysis: the role of gate resistance

Non-quasi-static small-signal models are essential for exploring the high-frequency (HF) behavior of the FinFET. In this paper, we propose a modified small-signal model for a multi-fin (MF) FinFET to extract the intrinsic and extrinsic parameters using Y-parameters extracted from TCAD. The gate resistance plays a significant role in optimizing the HF behavior with the varying numbers of fins in the MF configuration. We also test the model’s accuracy with increasing temperature up to 425 K. Using well-calibrated TCAD models, we further analyze the analog and linearity figures of merit, including cutoff frequency (f \(_{T}\) ${}_T$ ), the maximum frequency of oscillation (f \(_\textrm{max}\) ${}_{\text{max}}$ ), transconductance (g \(_{m}\) ${}_m$ ) and higher-order derivatives such as g \(_{m2}\) ${}_{m2}$ , g \(_{m3}\) ${}_{m3}$ , VIP \(_2\) ${}_2$ , and VIP \(_3\) ${}_3$ . Thus, the behavior of intrinsic and extrinsic parasitic resistance and capacitance is worth exploring to determine the device operation in the frequency range of >100 GHz.