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<p>Possible mechanisms of broadband structural luminescence in the transparency band of disordered wide-gap dielectrics were considered theoretically for the case of electronic transitions at deep-lying levels of intrinsic structural defects such as valence-alternation pairs in v-SiO<sub>2</sub>. It was concluded that the main mechanism was the geminate recombination of carriers at deep-lying levels of valence-alternation pairs. It was shown that accompanying mechanisms could be associated with polaron effects on isolated centers and phenomena on delocalized defect states.</p>

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Mechanisms of Broadband Structural Luminescence of Disordered Wide-gap Dielectrics

  • 期刊论文

  • 发表日期：

    2026年7月21日

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  • S. E. Maksimov,
  • Yu.V. Pakharukov,
  • Sh.U. Yuldashev,
  • O. V. Trunilina,
  • B. L. Oksengendler,
  • B. R. Kutlimurotov,
  • Kh.B. Ashurov

摘要

Possible mechanisms of broadband structural luminescence in the transparency band of disordered wide-gap dielectrics were considered theoretically for the case of electronic transitions at deep-lying levels of intrinsic structural defects such as valence-alternation pairs in v-SiO2. It was concluded that the main mechanism was the geminate recombination of carriers at deep-lying levels of valence-alternation pairs. It was shown that accompanying mechanisms could be associated with polaron effects on isolated centers and phenomena on delocalized defect states.