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<p>The optical width of the direct band gap of thin films of the Cu<sub>2</sub>ZnSnSe<sub>4</sub> compound with the kesterite structure was determined to be E<sub>g</sub> ≈ 1.052 eV at a temperature of 6 K based on photoluminescence (PL) and PL excitation spectra. The mechanisms of radiative recombination of nonequilibrium charge carriers in the temperature range 6–300 K were established. These mechanisms determined the appearance of broad PL bands in the energy region 0.7–1.1 eV. Redistribution of intensity between radiative recombination channels in the spectral region 0.93–0.99 eV was detected for the direct-gap compound Cu<sub>2</sub>ZnSnSe<sub>4</sub> with p-type conductivity, indicating the presence of deep acceptor and donor levels in the band gap. The thermal activation energy of nonradiative recombination channels involving structural defects was determined based on intensity quenching of broad PL bands in the energy range 0.7–1.0 eV. Their nature was discussed.</p>

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Photoluminescence of Highly Compensated Cu2ZnSnSe4 Compound with the Kesterite Structure

  • 期刊论文

  • 发表日期：

    2026年7月6日

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  • V. D. Zhivulko,
  • A. V. Mudryi,
  • O. M. Borodavchenko,
  • K. V. Usenko,
  • E. V. Lutsenko,
  • V. N. Pavlovskii,
  • G. P. Yablonskii,
  • M. V. Yakushev

摘要

The optical width of the direct band gap of thin films of the Cu2ZnSnSe4 compound with the kesterite structure was determined to be Eg ≈ 1.052 eV at a temperature of 6 K based on photoluminescence (PL) and PL excitation spectra. The mechanisms of radiative recombination of nonequilibrium charge carriers in the temperature range 6–300 K were established. These mechanisms determined the appearance of broad PL bands in the energy region 0.7–1.1 eV. Redistribution of intensity between radiative recombination channels in the spectral region 0.93–0.99 eV was detected for the direct-gap compound Cu2ZnSnSe4 with p-type conductivity, indicating the presence of deep acceptor and donor levels in the band gap. The thermal activation energy of nonradiative recombination channels involving structural defects was determined based on intensity quenching of broad PL bands in the energy range 0.7–1.0 eV. Their nature was discussed.