<p>A method is proposed for creating an optical profile diffraction grating consisting of nanoporous germanium (Ge) layers by sputtering a single-crystal c-Ge substrate by Bi<sup>+</sup> ions at energy E = 18 keV, ion beam current density J = 5 μA/cm<sup>2</sup>, and dose range D = 2.5·10<sup>16</sup>–1.0∙10<sup>17</sup> ions/cm<sup>2</sup> through a copper mesh mask with square cells with length 20 μm. During the ion sputtering, cGe is sputtered in unmasked areas of the irradiated c-Ge leading to formation of a nanoporous Bi:PGe layer. The formation of periodic Bi:PGe microstructures on the c-Ge surface was monitored using optical, electron, and probe microscopy. The operation of this diffraction grating was demonstrated by probing it with helium-neon laser radiation at wavelength 632.8 nm in the optical spectral range.</p>

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Creation of an Optical Profile Diffraction Grating Made with Nanoporous Germanium by Sputtering with Bismuth Ions

  • A. L. Stepanov,
  • A. M. Rogov,
  • V. F. Sotnikova,
  • V. F. Valeev,
  • V. I. Nuzhdin,
  • D. A. Konovalov

摘要

A method is proposed for creating an optical profile diffraction grating consisting of nanoporous germanium (Ge) layers by sputtering a single-crystal c-Ge substrate by Bi+ ions at energy E = 18 keV, ion beam current density J = 5 μA/cm2, and dose range D = 2.5·1016–1.0∙1017 ions/cm2 through a copper mesh mask with square cells with length 20 μm. During the ion sputtering, cGe is sputtered in unmasked areas of the irradiated c-Ge leading to formation of a nanoporous Bi:PGe layer. The formation of periodic Bi:PGe microstructures on the c-Ge surface was monitored using optical, electron, and probe microscopy. The operation of this diffraction grating was demonstrated by probing it with helium-neon laser radiation at wavelength 632.8 nm in the optical spectral range.