<p>Antireflection coatings (ARCs) increase the absorption of light and, therefore, the conversion efficiency of solar cells. Mullite was chosen as the ARC material for a silicon (Si) solar cell and was synthesized by melting a charge consisting of a mixture of Al<sub>2</sub>O<sub>3</sub> and SiO<sub>2</sub> at a component concentration of 75 and 25 wt.%, respectively. It has been established that the integral reflection (<i>R</i><sub><i>S</i></sub>) of ARCs based on mullite is about 6.0 times less than for silicon and about 2.5 times less than the <i>R</i><sub><i>S</i></sub> of a coating based on silicon nitride. The electric characteristics measured by a solar simulator before and after vacuum deposition of a mullite film with a thickness of 80–85 nm on solar-cell samples showed an increase of short-circuit current up to 49.5% and a rise in efficiency up to 6.8%.</p>

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Anti-Reflection Coating Based on Mullite for Silicon Solar Cells

  • S. X. Suleymanov,
  • V. F. Gremenok,
  • A. V. Stanchik,
  • V. V. Khoroshko,
  • V. G. Dyskin,
  • M. U. Djanklich,
  • N. A. Kulagina,
  • U. B. Hamdamov

摘要

Antireflection coatings (ARCs) increase the absorption of light and, therefore, the conversion efficiency of solar cells. Mullite was chosen as the ARC material for a silicon (Si) solar cell and was synthesized by melting a charge consisting of a mixture of Al2O3 and SiO2 at a component concentration of 75 and 25 wt.%, respectively. It has been established that the integral reflection (RS) of ARCs based on mullite is about 6.0 times less than for silicon and about 2.5 times less than the RS of a coating based on silicon nitride. The electric characteristics measured by a solar simulator before and after vacuum deposition of a mullite film with a thickness of 80–85 nm on solar-cell samples showed an increase of short-circuit current up to 49.5% and a rise in efficiency up to 6.8%.