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<p>Based on the mean-field Hubbard model and the Green’s function formalism, we study the transport properties in a graphene-nanoribbon-based device with Rashba spin–orbit coupling (RSOC). Several influences on the conductance are discussed in detail, including ribbon width, ribbon length, RSOC, top-gate-generated potential energy <i>V</i>, on-site Coulomb repulsion <i>U</i>, Fermi energy <i>E</i><sub><i>F</i></sub>, and temperature <i>T</i>. The results show that the transport properties of this device are strongly related to its magnetic configurations that are primarily determined by <i>U</i>, and partly dependent on <i>V</i> and <i>E</i><sub><i>F</i></sub>. The RSOC and <i>T</i> have no significant effect on the total conductance. Interestingly, the total conductance exhibits a fluctuating behavior with increasing ribbon length and <i>V</i> at <i>U</i> = 1.2<i>t</i>. This behavior of conductance could be well modulated by top and back gates, thus making it available for field-effect transistors.</p>

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Quantum Transport in a Graphene-Nanoribbon-Based Device with Rashba Spin- Orbit Coupling

  • 期刊论文

  • 发表日期：

    2026年4月10日

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  • Xiao-Dong Tan,
  • Jian Lei,
  • Yu Shi,
  • Li-Jun Li

摘要

Based on the mean-field Hubbard model and the Green’s function formalism, we study the transport properties in a graphene-nanoribbon-based device with Rashba spin–orbit coupling (RSOC). Several influences on the conductance are discussed in detail, including ribbon width, ribbon length, RSOC, top-gate-generated potential energy V, on-site Coulomb repulsion U, Fermi energy EF, and temperature T. The results show that the transport properties of this device are strongly related to its magnetic configurations that are primarily determined by U, and partly dependent on V and EF. The RSOC and T have no significant effect on the total conductance. Interestingly, the total conductance exhibits a fluctuating behavior with increasing ribbon length and V at U = 1.2t. This behavior of conductance could be well modulated by top and back gates, thus making it available for field-effect transistors.