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<p>Time-of-flight Neutron Diffraction was used to obtain diffraction patterns for GS-44 silicon nitride from 20&#xa0;°C to 1500&#xa0;°C. These patterns were refined using the Rietveld analysis method. Lattice parameters obtained as a function of temperature from refined diffraction data allowed determination of temperature-dependent thermal expansion coefficients for silicon nitride over this temperature range.</p>

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Coefficient of Thermal Expansion of Si3N4 via Neutron Diffraction

  • 期刊论文

  • 发表日期：

    2025年6月25日

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  • Geoffrey Swift

摘要

Time-of-flight Neutron Diffraction was used to obtain diffraction patterns for GS-44 silicon nitride from 20 °C to 1500 °C. These patterns were refined using the Rietveld analysis method. Lattice parameters obtained as a function of temperature from refined diffraction data allowed determination of temperature-dependent thermal expansion coefficients for silicon nitride over this temperature range.