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<p>This paper presents a functionally integrated technique that has been successfully applied in a frequency doubler with the symbolically defined model (SDM) of GaN Schottky barrier diode (SBD). A corresponding circuit is designed based on this new technique to perform multiple functions, including mode transition, harmonic impedance matching, filtering, and DC biasing. The design process is discussed in detail, and a complete frequency doubling circuit is formed by combining the input and output waveguide. Furthermore, the SDM enables a more accurate characterization of the nonlinear properties of SBDs, facilitating the attainment of a more extensive operating bandwidth, which permits the generation of simulations and measurements that exhibit a consistent trend of changes. The measurement results demonstrate that the designed frequency doubler is capable of operating in both reverse DC biasing and self-biased modes, exhibiting comparable performance in each. When the input power is 700 mW, the peak output power is 113.2 mW with a corresponding conversion efficiency of 16.17%. Furthermore, it has a competitive operating bandwidth with an output power exceeding 55 mW within the range of 158–193&#xa0;GHz.</p>

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A Frequency Doubler Utilizing Functionally Integrated Technique Based on a Symbolically Defined Model of GaN Schottky Barrier Diode

  • 期刊论文

  • 发表日期：

    2025年5月8日

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  • Xiang Luo,
  • Xiang Li,
  • Kai Zhang,
  • Lanxin Yang,
  • Huali Zhu,
  • Kunpeng Dai,
  • Yiyuan Zheng,
  • Yong Zhang

摘要

This paper presents a functionally integrated technique that has been successfully applied in a frequency doubler with the symbolically defined model (SDM) of GaN Schottky barrier diode (SBD). A corresponding circuit is designed based on this new technique to perform multiple functions, including mode transition, harmonic impedance matching, filtering, and DC biasing. The design process is discussed in detail, and a complete frequency doubling circuit is formed by combining the input and output waveguide. Furthermore, the SDM enables a more accurate characterization of the nonlinear properties of SBDs, facilitating the attainment of a more extensive operating bandwidth, which permits the generation of simulations and measurements that exhibit a consistent trend of changes. The measurement results demonstrate that the designed frequency doubler is capable of operating in both reverse DC biasing and self-biased modes, exhibiting comparable performance in each. When the input power is 700 mW, the peak output power is 113.2 mW with a corresponding conversion efficiency of 16.17%. Furthermore, it has a competitive operating bandwidth with an output power exceeding 55 mW within the range of 158–193 GHz.