Dyakonov-Shur Instability in Diamond Terahertz Field-Effect Transistors

Recent analysis revealed a great potential of diamond transistors for room-temperature THz sources and detectors. This paper reports on room-temperature sub-THz resonant oscillations of plasma waves in the p-diamond terahertz field-effect transistor (TeraFET). The instability mechanism in the hydrodynamic model predicts that the Dyakonov-Shur instability occurs in a certain range of hole drift velocities overcoming damping from viscosity and scattering. The fundamental mode resonant frequency could reach sub-THz frequencies around 300 GHz for longer channel lengths and lower gate swing voltages. This shows the potential of diamond TeraFETs for the next 6G wireless communications in the 300-GHz band.