<p>In order to investigate the behavior of copper impurities in silicon, we performed measurements on the <InlineEquation ID="IEq5"> <EquationSource Format="TEX">\(\beta\)</EquationSource> </InlineEquation>-ray detected nuclear magnetic resonance (<InlineEquation ID="IEq6"> <EquationSource Format="TEX">\(\beta\)</EquationSource> </InlineEquation>-NMR) spectroscopy of a short-lived nucleus <InlineEquation ID="IEq7"> <EquationSource Format="TEX">\(^{58}\)</EquationSource> </InlineEquation>Cu (<i>I</i> = 1, <InlineEquation ID="IEq8"> <EquationSource Format="TEX">\(T_{1/2}\)</EquationSource> </InlineEquation> = 3.2 s) implanted into single-crystal silicon. The result indicates that resonance lines due to the quadrupole interaction may exist at 20 K in the range of 1.8–2.6 MHz for the splitting frequency and 0–0.4 kHz for the second-order shift when an external magnetic field of 0.93 T is applied parallel to the c-axis of the Si crystal. This may support the previous report on the <InlineEquation ID="IEq9"> <EquationSource Format="TEX">\(\beta\)</EquationSource> </InlineEquation>-ray emission channeling spectroscopy that the lattice location of implanted Cu ions into Si is slightly dislocated from the substitutional site of Si.</p>

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Nuclear quadrupole interaction of short-lived nucleus \(^{58}\)Cu in Si studied by \(\beta\)-NMR spectroscopy

  • M. Mihara,
  • M. Tanaka,
  • Y. Tanaka,
  • H. Du,
  • T. Sugihara,
  • K. Ohnishi,
  • S. Yagi,
  • Y. Ishibashi,
  • Y. Abe,
  • H. Ueno,
  • K. Yamada,
  • T. Fujimura,
  • M. Fukuda,
  • T. Hori,
  • Y. Ichikawa,
  • K. Imamura,
  • T. Izumikawa,
  • K. Matsukawa,
  • K. Matsuta,
  • T. Minamisono,
  • S. Momota,
  • T. Moriguchi,
  • D. Nagae,
  • T. Nagatomo,
  • S. Nakamura,
  • D. Nishimura,
  • T. Ohtsubo,
  • K. Shirai,
  • T. Suzuki,
  • M. Takechi,
  • T. Yamaguchi,
  • R. Yanagihara

摘要

In order to investigate the behavior of copper impurities in silicon, we performed measurements on the \(\beta\) -ray detected nuclear magnetic resonance ( \(\beta\) -NMR) spectroscopy of a short-lived nucleus \(^{58}\) Cu (I = 1, \(T_{1/2}\) = 3.2 s) implanted into single-crystal silicon. The result indicates that resonance lines due to the quadrupole interaction may exist at 20 K in the range of 1.8–2.6 MHz for the splitting frequency and 0–0.4 kHz for the second-order shift when an external magnetic field of 0.93 T is applied parallel to the c-axis of the Si crystal. This may support the previous report on the \(\beta\) -ray emission channeling spectroscopy that the lattice location of implanted Cu ions into Si is slightly dislocated from the substitutional site of Si.