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<p>Cu₂O thin films with excellent adhesion were deposited on stainless steel substrates using radio-frequency (RF) magnetron sputtering. Although Cu₂O is a promising electrode material, its relatively high electrical resistivity restricts its application in supercapacitor devices. In the present study, the electrical resistivity of Cu₂O thin films was systematically minimized by optimizing four key sputtering parameters like oxygen to argon (O₂:Ar) gas ratio, RF power, substrate temperature, and post-deposition vacuum annealing temperature using the Taguchi design of experiments approach. Compared with the initial parameter set, the optimized predictive design achieved an approximately 30% reduction in electrical resistivity, reaching a minimum value of 7.05 × 10⁻<sup>5</sup> Ω·cm. Analysis of variance (ANOVA) revealed that the O₂:Ar ratio is the most influential parameter governing the electrical properties of the films. Structural and phase evolution studies using X-ray diffraction (XRD) and Raman spectroscopy confirmed systematic phase transitions in copper oxide thin films with varying O₂:Ar ratios, progressing from CuO to Cu₄O₃, Cu₂O, and finally metallic Cu as the oxygen content decreased. Notably, films deposited at an O₂:Ar ratio of 1:11 exhibited a single-phase Cu₂O structure with enhanced surface roughness. Electrochemical characterization of the optimized films demonstrated pronounced pseudocapacitive behavior with excellent cycling stability, highlighting their potential as efficient electrode materials for supercapacitor applications.</p>

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Optimization of process parameters for the pseudocapacitive properties of Cu2O thin films prepared by r.f. magnetron sputtering

  • 期刊论文

  • 发表日期：

    2026年3月14日

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  • Dadamiah P. M. D. Shaik,
  • Nageswara Rao Lakkimsetty,
  • Clement Varaprasad Karu

摘要

Cu₂O thin films with excellent adhesion were deposited on stainless steel substrates using radio-frequency (RF) magnetron sputtering. Although Cu₂O is a promising electrode material, its relatively high electrical resistivity restricts its application in supercapacitor devices. In the present study, the electrical resistivity of Cu₂O thin films was systematically minimized by optimizing four key sputtering parameters like oxygen to argon (O₂:Ar) gas ratio, RF power, substrate temperature, and post-deposition vacuum annealing temperature using the Taguchi design of experiments approach. Compared with the initial parameter set, the optimized predictive design achieved an approximately 30% reduction in electrical resistivity, reaching a minimum value of 7.05 × 10⁻5 Ω·cm. Analysis of variance (ANOVA) revealed that the O₂:Ar ratio is the most influential parameter governing the electrical properties of the films. Structural and phase evolution studies using X-ray diffraction (XRD) and Raman spectroscopy confirmed systematic phase transitions in copper oxide thin films with varying O₂:Ar ratios, progressing from CuO to Cu₄O₃, Cu₂O, and finally metallic Cu as the oxygen content decreased. Notably, films deposited at an O₂:Ar ratio of 1:11 exhibited a single-phase Cu₂O structure with enhanced surface roughness. Electrochemical characterization of the optimized films demonstrated pronounced pseudocapacitive behavior with excellent cycling stability, highlighting their potential as efficient electrode materials for supercapacitor applications.