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<p>This study presents the fabrication of ZnO-based resistive switching layer using the chemical bath deposition (CBD) method by varying the ZnO precursor concentration (0.025&#xa0;M, 0.050&#xa0;M, and 0.075&#xa0;M). X-ray diffraction confirmed the formation of a hexagonal wurtzite phase of ZnO. The scanning electron microscopy (SEM) was used to examine the surface morphology and vertical alignment of ZnO nanorods synthesized at different precursor concentrations. The electrical results suggested that the <i>I-V</i> nature of the Ag/ZnO/ITO devices changed from rectifying to non-rectifying behavior as the ZnO precursor concentration increased from 0.025&#xa0;M to 0.075&#xa0;M. The optimized Ag/ZnO<sub>0.050</sub>/ITO device exhibited stable resistive switching behaviour and demonstrated good non-volatile memory properties (endurance: 10<sup>4</sup> cycles and data retention: 2 × 10<sup>4</sup> seconds). It is observed that the conduction mechanism of the Ag/ZnO<sub>0.050</sub>/ITO device follows Ohmic and Child’s square law, and the resistive switching mechanism is due to a filamentary process. This study highlights that the tuning of synthesis parameters and applied voltage can lead to excellent resistive switching devices.</p>

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Modulating rectifying to non-rectifying resistive switching behaviour via engineering the aspect ratio of zinc oxide and applied voltage

  • 期刊论文

  • 发表日期：

    2025年9月6日

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  • Akshay V. Ghorpade,
  • Sarfraj H. Mujawar,
  • Namdev S. Harale,
  • Nilesh V. Sankpal,
  • Tukaram D. Dongale,
  • Bhushan. B. Dhale

摘要

This study presents the fabrication of ZnO-based resistive switching layer using the chemical bath deposition (CBD) method by varying the ZnO precursor concentration (0.025 M, 0.050 M, and 0.075 M). X-ray diffraction confirmed the formation of a hexagonal wurtzite phase of ZnO. The scanning electron microscopy (SEM) was used to examine the surface morphology and vertical alignment of ZnO nanorods synthesized at different precursor concentrations. The electrical results suggested that the I-V nature of the Ag/ZnO/ITO devices changed from rectifying to non-rectifying behavior as the ZnO precursor concentration increased from 0.025 M to 0.075 M. The optimized Ag/ZnO0.050/ITO device exhibited stable resistive switching behaviour and demonstrated good non-volatile memory properties (endurance: 104 cycles and data retention: 2 × 104 seconds). It is observed that the conduction mechanism of the Ag/ZnO0.050/ITO device follows Ohmic and Child’s square law, and the resistive switching mechanism is due to a filamentary process. This study highlights that the tuning of synthesis parameters and applied voltage can lead to excellent resistive switching devices.