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<p>FAPbI<sub>3</sub> is widely used as an absorber layer as it shows better performance, because it has good opto-electronic properties. Also, we used a suitable hole transporting layer (HTL) and electron transporting layer (ETL) in order to extract good photovoltaic performance of the device. In this paper, the basic structure was first simulated, and its photovoltaic parameters as V<sub>oc</sub>= 1.03&#xa0;V, J<sub>sc</sub>=22.7&#xa0;mA/cm<sup>2</sup>, FF = 71.42%, PCE = 16.85%, were obtained. Further, the outcome of the simultaneous effect of variations in electron affinity, mobility, and doping concentration of the ZnSe as ETL and MoO<sub>x</sub> as HTL was studied. To begin with, we varied the electron affinity of ZnSe (ETL) and of MoO<sub>x</sub> (HTL) simultaneously, and we obtained that at the optimum value of electron affinity, V<sub>oc</sub>= 1.036&#xa0;V, J<sub>sc</sub>=22.77&#xa0;mA/cm<sup>2</sup>, FF = 71.22%, PCE = 16.81%. Now these optimized value of electron affinity were kept fixed and the mobility of both layers were varied at the same time, that lead us to V<sub>oc</sub> = 1.036&#xa0;V, J<sub>sc</sub>=22.77&#xa0;mA/cm<sup>2</sup>, FF = 71.22%, PCE = 16.81% and at the end with the help of optimized value of electron affinity and mobility, we proceeded to vary the doping concentration of both ETL and HTL materials and we observed there was over- all increase in efficiency, V<sub>oc</sub>= 1.013&#xa0;V, J<sub>sc</sub>=24.49&#xa0;mA/cm<sup>2</sup>, FF = 76.46%, PCE = 18.97%.</p>

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Numerical simulation of FAPbI3-based perovskite solar cells employing ZnSe as ETL and MoOx as HTL

  • 期刊论文

  • 发表日期：

    2025年9月24日

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  • T. S. Bane,
  • A. S. Chaudhari,
  • R. S. Shaikh,
  • N. S. Gurav,
  • M. G. Deshmukh,
  • H. M. Pathan,
  • G. H. Jain

摘要

FAPbI3 is widely used as an absorber layer as it shows better performance, because it has good opto-electronic properties. Also, we used a suitable hole transporting layer (HTL) and electron transporting layer (ETL) in order to extract good photovoltaic performance of the device. In this paper, the basic structure was first simulated, and its photovoltaic parameters as Voc= 1.03 V, Jsc=22.7 mA/cm2, FF = 71.42%, PCE = 16.85%, were obtained. Further, the outcome of the simultaneous effect of variations in electron affinity, mobility, and doping concentration of the ZnSe as ETL and MoOx as HTL was studied. To begin with, we varied the electron affinity of ZnSe (ETL) and of MoOx (HTL) simultaneously, and we obtained that at the optimum value of electron affinity, Voc= 1.036 V, Jsc=22.77 mA/cm2, FF = 71.22%, PCE = 16.81%. Now these optimized value of electron affinity were kept fixed and the mobility of both layers were varied at the same time, that lead us to Voc = 1.036 V, Jsc=22.77 mA/cm2, FF = 71.22%, PCE = 16.81% and at the end with the help of optimized value of electron affinity and mobility, we proceeded to vary the doping concentration of both ETL and HTL materials and we observed there was over- all increase in efficiency, Voc= 1.013 V, Jsc=24.49 mA/cm2, FF = 76.46%, PCE = 18.97%.