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<p>Cuprous oxide and Titanium dioxide are good materials for photovoltaic applications. In the attending work, we have numerically simulated Cu<sub>2</sub>O and TiO<sub>2</sub> P-N heterojunction solar cells using SCAPS-1D to enhance photovoltaic performance. This work concentrated on enhancing the efficiency of solar cell using the SCAPS-1D simulation tool. The study aims to provide a theoretical guide for laboratory research and enhancement of the efficiency of the solar cell. The parameters such as the thickness, electron affinity &amp; band gap of the Cu<sub>2</sub>O and TiO<sub>2</sub> layer are step wise varied simultaneously. The model used a working point at a temperature of 300&#xa0;K and an input power of 1000&#xa0;W/m<sup>2</sup> with AM 1.5 lamp illumination. The designed solar cell exhibits a Power consumption efficiency (η) of 12.19%, short-circuit current density (J<sub>sc</sub>) of 10.08&#xa0;mA/cm<sup>2</sup>, open-circuit voltage (V<sub>oc</sub>) of 1.43&#xa0;V, and fill factor (FF) of 84.16%.</p>

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Numerical investigation and performance of Cu2O/TiO2 P-N heterojunction solar cells using SCAPS-1D

  • 期刊论文

  • 发表日期：

    2025年9月18日

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  • A. A. Mane,
  • B. B. Dhale,
  • G. H. Jain,
  • A. S. Chaudhari

摘要

Cuprous oxide and Titanium dioxide are good materials for photovoltaic applications. In the attending work, we have numerically simulated Cu2O and TiO2 P-N heterojunction solar cells using SCAPS-1D to enhance photovoltaic performance. This work concentrated on enhancing the efficiency of solar cell using the SCAPS-1D simulation tool. The study aims to provide a theoretical guide for laboratory research and enhancement of the efficiency of the solar cell. The parameters such as the thickness, electron affinity & band gap of the Cu2O and TiO2 layer are step wise varied simultaneously. The model used a working point at a temperature of 300 K and an input power of 1000 W/m2 with AM 1.5 lamp illumination. The designed solar cell exhibits a Power consumption efficiency (η) of 12.19%, short-circuit current density (Jsc) of 10.08 mA/cm2, open-circuit voltage (Voc) of 1.43 V, and fill factor (FF) of 84.16%.