Microwave properties and complex permittivity of MgxMn(0.9−x)Al0.1Zn0.8Fe1.2O4 thick films by VSWR method
摘要
The present study deals with the investigation of Mg0.8Mn0.1Al0.8Zn0.1Fe1.2O4 and Mg0.9Al0.1Zn0.8Fe1.2O4 thick films on alumina substrate deposited by using screen printing technique. MgxMn(0.9−x)Al0.1Zn0.8Fe1.2O4 powders have been synthesized by the solid state reaction method to obtain expected stoichiometry. The crystal structure of these screen printed thick films was analyzed by using X-ray diffraction pattern and surface morphology was studied by using scanning electron microscope. Spinel crystal system with fine cubic crystals were formed for the screen printed ferrite thick films. The transmission and reflection coefficient of these thick films was determined by using waveguide reflectometer set up in the microwave X band (8–12 GHz). High transmittance was shown by all the samples above 10 GHz frequency. Transmittance above 80% and low reflectance was observed for 30 μm thick films of both the compositions in high frequency region. It was observed that due to doping of manganese to Mg0.9Al0.1Zn0.8Fe1.2O4, the transmittance was decreased by 15–20% below 10 GHz. Transmittance measurements by Voltage standing wave ratio (VSWR) were used to determine complex permittivity of these thick films. The effect of thickness of the thick films and doping of Manganese on the electromagnetic properties of these ferrite thick films have been investigated and reported in this paper. These measurements were carried out in the absence of an external magnetic field.