Optoelectronic properties of nanostructured n-Sb₂S₃/ p-Si heterojunction

Silicon heterojunction thin film technology offers a new cost-effective and efficient alternative to conventional Si-homojunction solar cells and other optoelectronic devices including photodiodes. This study offers a comprehensive examination of n-type Sb₂S₃ thin film grown on p-type Silicon wafer via spray pyrolysis technique. Influence of the structural, morphological, and optical properties on the optoelectronic performance of n-Sb₂S₃/p-Si heterojunction is analyzed. As deposited Sb₂S₃ films acquire nanoneedle-like structure as confirmed by FE-SEM. Optical measurements suggest a narrow band gap of n-Sb₂S₃ around 1.43 eV. The junction provides a photocurrent density of 0.223 A/cm² with a responsivity of 0.1 A/W at 5 V. Optoelectronic measurements hint toward Sb₂S₃ as a potential and inexpensive heterojunction partner in Silicon photovoltaics.