Exploration of ZnO:SiC composite material for photovoltaic applications

This study explores the development and characterization of zinc oxide—silicon carbide (ZnO-SiC) composite materials fabricated using RF magnetron sputtering, with a focus on their potential application as electron transport layers (ETL) in perovskite solar cell. The ZnO-SiC composites were prepared by varying the SiC sputtering power from 10 to 30W, and the resulting films were analyzed for their optical, electrical, and morphological properties. UV–Vis spectroscopy revealed that the bandgap of the films ranged between 3.3 eV and 3.8 eV, with high transmittance values, making them suitable for ETL applications. Hall effect measurements indicated that all films exhibited n-type conductivity with the highest carrier concentration observed at 20W SiC power. Additionally, AFM analysis showed that the surface roughness decreased with increasing SiC power, with Sample 2 (SiC at 15W) demonstrating the smoothest surface, which is advantageous for enhancing charge transfer efficiency in photovoltaic devices. The results suggest that ZnO-SiC composites, particularly those sputtered at moderate SiC power, hold promise as effective ETLs in perovskite solar cells. Future research should focus on optimizing sputtering parameters to further enhance the electrical properties and crystallinity of these materials.