Fabrication of Tungsten/n-CdSe/Pyrographite/Brass sandwiched electronic device and transport characterization for its resistive switching applications

Cadmium selenide (CdSe) is a semiconducting compound that belongs to the II-VI family (where II = Zn, Cd, or Hg and VI = S, Se, or Te). The programmed rotating furnace was used to melt 5N pure Cd and Se to stoichiometric extents to synthesize the homogenous bulk CdSe (CS) binary semiconducting compound. The synthesised bulk was examined using X-ray diffraction (XRD), and all of the diffractogram peaks were identified and tracked with JCPDS file 77-2307. Crystal structural evidence points to a wurtzite (hexagonal) form for CdSe, with a space group of P6₃mc (186). A vigorous XRD peak intensity and a moderate full breadth/width at half maximum (β) (FWHM) of the diffraction peak value in the synthesised CS bulk indicate high levels of crystallinity. The CS bulk's d-interplanar spacings (as determined by Bragg's law and Bravais theory), stacking fault (SF), texture coefficient (C_i), degree of preferred orientation (σ), lattice constants (a and c), and unit cell volume (V) have all been computed. The article presents CS bulk's d-interplanar spacings, stacking fault (SF), texture coefficient (C_i), degree of preferred orientation (σ), lattice constants (a and c), and unit cell volume (V). Investigations into the microstructural characteristics of CS bulk have been conducted. Elastic moduli for the bulk, Voigt shear, Young, and Poisson's ratio have all been calculated. The Debye temperature of the CS bulk has been found by measuring its transverse and longitudinal sound velocities. Energy dispersive analysis of X-rays (EDAX) confirmed the CS bulk's stoichiometry. Using a pycnometer, the synthesised CS compound's density was around 5.670 gm/cm³. Thermal evaporation was used to create thin films (TFs) from bulk CS on quartz glass and highly polished pyrographite substrates at room temperature (RT) (≃303 K). To determine the thickness and surface morphology of CSTFs, scanning electron microscopy (SEM) was employed. An SCS-4200 semiconductor characterisation system was used to evaluate the static current (I)-voltage (V) characteristic of a tungsten/CSTF/pyrographite/brass sandwiched device. A cathode ray oscilloscope (CRO) confirmed the device's dynamic behaviour. The device's conductivity was low when it was amorphous but high when it was crystalline. The production of mems is influenced by the resistive switching states induced by an electric field. Providing incontrovertible evidence from electron microscopy and characterizations of static and dynamic electrical transport, conductive filaments emerged at grain boundaries by switching methods. The implications are analysed in detail.