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<p>Nanoscale amorphous thin films of the (InSe)<sub>20</sub>(GaSe)<sub>80</sub> and (InSe)<sub>50</sub>(GaSe)<sub>50</sub> compositions were subjected to phase and elemental analysis, as well as to surface morphology studies. The optical transmission analysis of the films established their absorption to correspond to indirect allowed transitions in accordance with the Tauc model under the optical band gap values (<i>E</i><sub><i>g</i></sub>) of 1.26 and 1.07 eV for the (InSe)<sub>20</sub>(GaSe)<sub>80</sub> and (InSe)<sub>50</sub>(GaSe)<sub>50</sub> thin films, respectively.</p>

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Morphology and Optical Properties of Amorphous Thin Films (InSe)x(GaSe)100–x

  • 期刊论文

  • 发表日期：

    2025年7月3日

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  • S. A. Kozyukhin,
  • D. V. Pepelyaev,
  • M. A. Teplonogova

摘要

Nanoscale amorphous thin films of the (InSe)20(GaSe)80 and (InSe)50(GaSe)50 compositions were subjected to phase and elemental analysis, as well as to surface morphology studies. The optical transmission analysis of the films established their absorption to correspond to indirect allowed transitions in accordance with the Tauc model under the optical band gap values (Eg) of 1.26 and 1.07 eV for the (InSe)20(GaSe)80 and (InSe)50(GaSe)50 thin films, respectively.