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<p>Bismuth ferrite (BFO), a p-type semiconductor with notable visible-light absorption, is an attractive photocathode material for photoelectrochemical (PEC) systems. This study presents a facile route to construct BFO/ZnO heterojunctions on fluorine-doped tin oxide (FTO) substrates via sol-gel and scraping method. A comprehensive characterization of the samples, including surface morphology, crystal structure, and chemical states, confirmed the successful fabrication of the BFO/ZnO heterojunction. The pure BFO exhibits photocathode behavior, with a negative photocurrent of -7.0 µA/cm², consistent with its p-type semiconductor characteristic. All heterojunction samples exhibited enhanced PEC performance, as demonstrated by the higher photocurrent densities. A maximum photocurrent density of -24.6 µA/cm² was detected in the optimal BFO/ZnO heterojunction sample, which was 3.51 folds by that of the pure BFO. The enhancement of PEC properties can be attributed to the built-in electric field (<i>E</i><sub><i>bif</i></sub>) of the p-n junction, which can promote the separation and transfer efficiency of charge carriers, analyzed by the carrier dynamics and the well band alignment. This research offers a promising strategy for developing low-cost and efficient PEC conversion devices.</p> Graphical Abstract <p></p>

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Interface Engineering of BiFeO3/ZnO p-n Heterojunctions for Enhanced Charge Separation in Photoelectrochemical Water Splitting

  • 期刊论文

  • 发表日期：

    2026年2月12日

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  • Huanyu Shen,
  • Xuemei Lu,
  • Meng Cao,
  • Feng Nan

摘要

Bismuth ferrite (BFO), a p-type semiconductor with notable visible-light absorption, is an attractive photocathode material for photoelectrochemical (PEC) systems. This study presents a facile route to construct BFO/ZnO heterojunctions on fluorine-doped tin oxide (FTO) substrates via sol-gel and scraping method. A comprehensive characterization of the samples, including surface morphology, crystal structure, and chemical states, confirmed the successful fabrication of the BFO/ZnO heterojunction. The pure BFO exhibits photocathode behavior, with a negative photocurrent of -7.0 µA/cm², consistent with its p-type semiconductor characteristic. All heterojunction samples exhibited enhanced PEC performance, as demonstrated by the higher photocurrent densities. A maximum photocurrent density of -24.6 µA/cm² was detected in the optimal BFO/ZnO heterojunction sample, which was 3.51 folds by that of the pure BFO. The enhancement of PEC properties can be attributed to the built-in electric field (Ebif) of the p-n junction, which can promote the separation and transfer efficiency of charge carriers, analyzed by the carrier dynamics and the well band alignment. This research offers a promising strategy for developing low-cost and efficient PEC conversion devices.

Graphical Abstract