Effect of bias in Argon Plasma on Electronic Structure of Electrocatalyst Pt/CNT for Hydrogen Evolution Reaction
摘要
Electronic structure engineering provides an effective route to enhance the mass activity and stability of Pt-based catalysts. In this paper, platinum nanoparticles supported on carbon nanotubes (Pt/CNTs) are prepared by treating the H2PtCl6/CNT precursor with argon plasma at different bias. Extensive structural characterization indicates that, compared with positive and zero bias of the substrate, negative bias causes the most defects in CNTs (ID/IG = 1.11), results in the lowest valence state of Pt, and achieves the highest Pt loading (4.9 wt%). Meanwhile, the synthesized Pt/CNTs at negative bias (Pt/CNT-V−) demonstrate significant catalytic activity and exceptional stability in the hydrogen evolution reaction (HER). The Pt/CNT-V− catalyst exhibits an overpotential of 45 mV at a current density of 10 mA cm− 2 and a mass activity of 3.28 A mg− 1 for the HER in 0.5 M H2SO4, surpassing the performance of commercial JM-Pt/C. The overpotential of the Pt/CNT-V− catalyst only negatively shifts by 3 mV after 3000 cycles, compared to the 9 mV shift observed for JM-Pt/C. This simple method provides a new strategy for tuning the electronic properties of metals on carbon carriers.
Graphical Abstract