<p>This work introduces a novel SG-HKQSTFET (Shifted-Gate High-k Quad-Segment Tunnel Field-Effect Transistor) biosensor designed for ultra-sensitive and label-free biomolecule detection. The structure incorporates a P⁺ source, N⁺ drain, and a segmented P-type channel that includes four vertical regions: <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\({\text{V}}_{1}\)</EquationSource> </InlineEquation>, <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\({\text{V}}_{3}\)</EquationSource> </InlineEquation>, and <InlineEquation ID="IEq3"> <EquationSource Format="TEX">\({\text{V}}_{4}\)</EquationSource> </InlineEquation> as intrinsic and undoped, while <InlineEquation ID="IEq4"> <EquationSource Format="TEX">\({\text{V}}_{2}\)</EquationSource> </InlineEquation> is n-type doped to support efficient band-to-band tunneling. A dual-gate configuration with a nanogap sensing cavity provides improved electrostatic control, while the <InlineEquation ID="IEq5"> <EquationSource Format="TEX">\({\text{HfO}}_{2}\)</EquationSource> </InlineEquation>/<InlineEquation ID="IEq6"> <EquationSource Format="TEX">\({\text{SiO}}_{2}\)</EquationSource> </InlineEquation> dielectric stack strengthens gate coupling and the electric field at the source–channel junction. The shifted-gate architecture further modifies the electric field distribution to improve tunneling efficiency and current conduction. TCAD simulations using Silvaco Atlas under biased and unbiased conditions show that the biased shifted-gate configuration achieves the best performance, with an <InlineEquation ID="IEq7"> <EquationSource Format="TEX">\({\text{I}}_{\text{ON}}/{\text{I}}_{\text{OFF}}\)</EquationSource> </InlineEquation> ratio of 1.16 × 10<sup>12</sup>, a low subthreshold swing (SS) of 16.7&#xa0;mV/dec, and a transconductance (<InlineEquation ID="IEq8"> <EquationSource Format="TEX">\({\text{g}}_{\text{m}}\)</EquationSource> </InlineEquation>) of 1.35 × 10⁻<sup>5</sup> A/V for the MDA-MB-231 biomolecule (K = 22), demonstrating the biosensor’s potential for reliable biomolecule detection.</p>

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Shifted-gate High-k Quad-Segment TFET biosensor

  • Karthikeyan P,
  • VishnuPriya K,
  • Nivetha M

摘要

This work introduces a novel SG-HKQSTFET (Shifted-Gate High-k Quad-Segment Tunnel Field-Effect Transistor) biosensor designed for ultra-sensitive and label-free biomolecule detection. The structure incorporates a P⁺ source, N⁺ drain, and a segmented P-type channel that includes four vertical regions: \({\text{V}}_{1}\) , \({\text{V}}_{3}\) , and \({\text{V}}_{4}\) as intrinsic and undoped, while \({\text{V}}_{2}\) is n-type doped to support efficient band-to-band tunneling. A dual-gate configuration with a nanogap sensing cavity provides improved electrostatic control, while the \({\text{HfO}}_{2}\) / \({\text{SiO}}_{2}\) dielectric stack strengthens gate coupling and the electric field at the source–channel junction. The shifted-gate architecture further modifies the electric field distribution to improve tunneling efficiency and current conduction. TCAD simulations using Silvaco Atlas under biased and unbiased conditions show that the biased shifted-gate configuration achieves the best performance, with an \({\text{I}}_{\text{ON}}/{\text{I}}_{\text{OFF}}\) ratio of 1.16 × 1012, a low subthreshold swing (SS) of 16.7 mV/dec, and a transconductance ( \({\text{g}}_{\text{m}}\) ) of 1.35 × 10⁻5 A/V for the MDA-MB-231 biomolecule (K = 22), demonstrating the biosensor’s potential for reliable biomolecule detection.