The rapid advancement of modern electronics demands innovative solutions for low-power, high-performance semiconductor devices. Junctionless Tunnel Field-Effect Transistors (JL-TFETs) have emerged as a promising alternative to traditional MOSFETs, offering simplified fabrication, elimination of PN junctions, and enhanced reliability through reduced ambipolar effects and suppression of random doping fluctuations. By combining the strengths of JL-FETs and TFETs, JL-TFETs provide superior electrical performance, including higher on-state current ( \(I_{ON}\) ), less SS (subthreshold swing), minimal leakage current ( \(I_{OFF}\) ) and an exceptional \(I_{ON}/I_{OFF}\) ratio. This review delves into the comparative analysis of homogeneous and heterogeneous JL-TFET structures, emphasizing their DC and AC performance metrics. Heterogeneous JL-TFETs, leveraging low-bandgap materials such as \({Si_XGe_{X-1}}\) and AlGaAs at critical regions, exhibit enhanced tunneling performance, lower power consumption and improved frequency performance. Advanced fabrication techniques like silicon-on-nothing (SON) technology and the integration of high-k dielectrics are explored for further optimization. Dual-material gate structures and material-engineered designs are analyzed to reveal their role in achieving superior performance and enhanced device scalability. The study presents a detailed evaluation of critical parameters, including SS, \(I_{ON}\) , \(I_{OFF}\) , tunneling rates, cut-off frequency ( \(f_t\) ), maximum oscillation frequency ( \(f_{max}\) ), gain bandwidth product (GBW), output conductance \(g_d\) and transconductance ( \(g_m\) ). By consolidating recent advancements, this review highlights the transformative potential of JL-TFETs for next-generation high-speed analog and RF applications, offering comprehensive foundation for future research and development in the field.
