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<p>As CMOS technology advances into deep-submicron nodes, leakage power has become a critical challenge for designing energy-efficient sense amplifiers in memory applications. High leakage currents increase overall power consumption and limit memory efficiency, necessitating effective reduction strategies. This review focuses on circuit-level leakage reduction techniques specifically tailored for CMOS sense amplifier designs utilized in SRAM and TCAM systems. It systematically categorizes sense amplifier types—voltage-mode, current-mode, and charge-transfer—and analyzes their leakage characteristics and mitigation methods. Advanced approaches such as LECTOR and LCNT are evaluated for their trade-offs in power consumption, performance, and area. Unlike existing surveys, this work highlights recent innovations in low-leakage operation for modern CMOS nodes, providing designers with comprehensive insights to optimize sense amplifier configurations for leakage-sensitive applications and guiding future low-power memory research directions.</p>

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Circuit-Level leakage reduction techniques in CMOS sense amplifiers for SRAM and TCAM: A review

  • 期刊论文

  • 发表日期：

    2026年2月12日

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  • Devesh Kishore,
  • Saswata Chakraborty,
  • Arindam Biswas,
  • Ankur Dumka

摘要

As CMOS technology advances into deep-submicron nodes, leakage power has become a critical challenge for designing energy-efficient sense amplifiers in memory applications. High leakage currents increase overall power consumption and limit memory efficiency, necessitating effective reduction strategies. This review focuses on circuit-level leakage reduction techniques specifically tailored for CMOS sense amplifier designs utilized in SRAM and TCAM systems. It systematically categorizes sense amplifier types—voltage-mode, current-mode, and charge-transfer—and analyzes their leakage characteristics and mitigation methods. Advanced approaches such as LECTOR and LCNT are evaluated for their trade-offs in power consumption, performance, and area. Unlike existing surveys, this work highlights recent innovations in low-leakage operation for modern CMOS nodes, providing designers with comprehensive insights to optimize sense amplifier configurations for leakage-sensitive applications and guiding future low-power memory research directions.