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<p>Bootstrap networks are widely used to power the floating high-side of high-voltage gate drivers, yet discrete fast-recovery diodes incur forward-drop loss, reverse-recovery stress, and PCB overhead. This work presents a 600-V gate-driver IC that integrates the bootstrap path by combining a 600-V laterally diffused MOS (LDMOS) pass device, a compact on-chip charge pump, and timing logic. The logic enables the LDMOS only while the low-side switch is on, transferring the supply (VCC) to the bootstrap capacitor without diode drop or recovery-induced overshoot. Fabricated in a qualified 600-V bipolar-CMOS-DMOS (BCD) technology that employs a deep-N-well high-voltage island with P-well/buried-P guard-ring isolation, the proposed driver places the bootstrap devices along the island periphery within the standard 600-V junction-termination region, thereby preserving the rated isolation without an appreciable die-area penalty. System-level evaluation in an air-conditioner intelligent power module (IPM) full-bridge shows that with VCC = 15 V the bootstrap node (VBS) rises to nearly 15 V within 20 ms; at 0.1-V forward bias the charging current reaches 2.5 A (versus 0.25 A at 0.9 V for a conventional scheme). Compared with discrete bootstrap designs, the proposed approach removes the external high-voltage fast-recovery diode, increases attainable VBS, reduces bill-of-materials and PCB area, and improves cost relative to silicon-on-insulator solutions—suiting high-voltage motor drives, especially three-phase full bridges.</p>

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High voltage gate driver IC with integrated bootstrap circuits for floating channels supply

  • 期刊论文

  • 发表日期：

    2025年12月12日

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  • Guanning Wang,
  • Yutong Liu,
  • Yuxiang Feng,
  • Qing Hua

摘要

Bootstrap networks are widely used to power the floating high-side of high-voltage gate drivers, yet discrete fast-recovery diodes incur forward-drop loss, reverse-recovery stress, and PCB overhead. This work presents a 600-V gate-driver IC that integrates the bootstrap path by combining a 600-V laterally diffused MOS (LDMOS) pass device, a compact on-chip charge pump, and timing logic. The logic enables the LDMOS only while the low-side switch is on, transferring the supply (VCC) to the bootstrap capacitor without diode drop or recovery-induced overshoot. Fabricated in a qualified 600-V bipolar-CMOS-DMOS (BCD) technology that employs a deep-N-well high-voltage island with P-well/buried-P guard-ring isolation, the proposed driver places the bootstrap devices along the island periphery within the standard 600-V junction-termination region, thereby preserving the rated isolation without an appreciable die-area penalty. System-level evaluation in an air-conditioner intelligent power module (IPM) full-bridge shows that with VCC = 15 V the bootstrap node (VBS) rises to nearly 15 V within 20 ms; at 0.1-V forward bias the charging current reaches 2.5 A (versus 0.25 A at 0.9 V for a conventional scheme). Compared with discrete bootstrap designs, the proposed approach removes the external high-voltage fast-recovery diode, increases attainable VBS, reduces bill-of-materials and PCB area, and improves cost relative to silicon-on-insulator solutions—suiting high-voltage motor drives, especially three-phase full bridges.