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<p>This study covers three complementary aspects; it focuses first on analyzing the turn-on and turn-off processes of the power CoolMOS transistor and investigating its switching times. Furthermore, it expands the scope of our previous works by validating the dynamic behaviour of the proposed model of the power CoolMOS transistor and it assesses the influence of the external gate resistance on the device’s switching performance. Simulation results for the switching characteristics were verified through experimental measurements. An experimental test was carried out using a resistive load circuit with different external gate resistance values to analyze its impact on the device’s switching behavior. The findings confirm the accuracy of the conclusions drawn from the theoretical and simulation analyses presented in this paper.</p>

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Impact of the external gate resistance on the power CoolMOS transistor transient switching dynamics

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年8月28日

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  • Sara Laafar,
  • Najib Boumaaz,
  • Abdelhadi Elbacha,
  • Badredine Lamuadni,
  • Asmaa Maali,
  • Abdallah Soulmani

摘要

This study covers three complementary aspects; it focuses first on analyzing the turn-on and turn-off processes of the power CoolMOS transistor and investigating its switching times. Furthermore, it expands the scope of our previous works by validating the dynamic behaviour of the proposed model of the power CoolMOS transistor and it assesses the influence of the external gate resistance on the device’s switching performance. Simulation results for the switching characteristics were verified through experimental measurements. An experimental test was carried out using a resistive load circuit with different external gate resistance values to analyze its impact on the device’s switching behavior. The findings confirm the accuracy of the conclusions drawn from the theoretical and simulation analyses presented in this paper.