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<p>The recent developments in sustainable energy solutions demand ultra-low power operation of cascaded charge pump (CP) circuits. This work reports a three-stage CP circuit designed using a swapped body biasing (SBB) approach in FinFET (18&#xa0;nm) technology which showcases notable peak power conversion efficiency of 38.04%, voltage at output of 455.11&#xa0;mV, power consumption of 65.35 nW, ripple voltage of 19.80&#xa0;mV and settling time of 80.05&#xa0;µs (@ 2% band) with input supply voltage of 100&#xa0;mV. Further, the performance of the designed three-stage CP is investigated for rigorous temperature, process and load variations. The performance of the proposed three-stage CP is better than earlier reported FinFET-based multiple-stage CP designs.</p>

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65.35 nW three-stage charge pump circuit based on swapped body biasing approach

  • 期刊论文

  • 发表日期：

    2025年9月1日

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  • Ricky Rajora,
  • Kulbhushan Sharma

摘要

The recent developments in sustainable energy solutions demand ultra-low power operation of cascaded charge pump (CP) circuits. This work reports a three-stage CP circuit designed using a swapped body biasing (SBB) approach in FinFET (18 nm) technology which showcases notable peak power conversion efficiency of 38.04%, voltage at output of 455.11 mV, power consumption of 65.35 nW, ripple voltage of 19.80 mV and settling time of 80.05 µs (@ 2% band) with input supply voltage of 100 mV. Further, the performance of the designed three-stage CP is investigated for rigorous temperature, process and load variations. The performance of the proposed three-stage CP is better than earlier reported FinFET-based multiple-stage CP designs.