In this paper, we utilize the advantages of Molybdenum Disulfide (MoS \({}_2\) ) transistors to design a Flash analog-to-digital converter (ADC) that achieves a reduced active area and dynamic power. MoS \({}_2\) field-effect transistors (FETs) are a class of emerging devices based on two-dimensional (2D) materials, offering high ON/OFF current ratios, excellent electrostatic control, and scalability, making them suitable for next-generation low-power electronics. To eliminate static power dissipation, the proposed ADC incorporates the threshold inverter quantization (TIQ) technique. A SPICE-compatible charge-based model for MoS \({}_2\) transistor, published in the literature, is used to simulate the proposed ADC. Due to their high ON/OFF current ratio and nanoscale geometry, MoS \({}_2\) FETs enable significant reductions in ADC active area and dynamic power relative to traditional device technologies. Simulation results reveal that the differential nonlinearity (DNL) ranges of [-0.18, 0.12]LSB , and the integral nonlinearity (INL) ranges of [-0.32, 0.24]LSB, both satisfying the requirements for 4-bit resolution at a 2 V operating voltage. In addition, the low ADC active area of 3050 \(\mu m^2\) rendering it well-suited for implementation in very large-scale integration (VLSI) circuits. Variations in process, temperature, and supply voltage affect the proposed method, and their influence on ADC performance is analyzed.
