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<p>A gate drive circuit with high speed, low delay and wide output voltage range is designed which can meet the driving requirements of GaN and SiC FETs in this paper. In order to improve the switching frequency and reduce the input/output delay a high speed output drive circuit with a wide gate voltage range and a low delay OOK TX/RX circuit are proposed. A 10&#xa0;MHz capacitive isolated gate driver IC with output current of 4 A and output gate voltage of 5&#xa0;V-25&#xa0;V is realized in 180&#xa0;nm BCD process. The test results show that the gate driver achieves the rise and fall time of 1.0&#xa0;ns and 1.5&#xa0;ns respectively under 5.0&#xa0;V supply, and the rise and fall time of 2.5&#xa0;ns and 3.2&#xa0;ns respectively under 25&#xa0;V supply with 10&#xa0;MHz frequency, and the delay time is 22.5&#xa0;ns and 25&#xa0;ns respectively for 5.0&#xa0;V and 25&#xa0;V supply.</p>

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A 4 A 10 MHz capacitive isolated gate driver with 5 V to 25 V output voltage for WBG FETs

  • 期刊论文

  • 发表日期：

    2025年7月21日

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  • Yuan Xu,
  • Dejin Zhou,
  • Fuwei Shen,
  • Renxia Ning,
  • Ningye He,
  • Zhenhai Chen,
  • Huang Wei

摘要

A gate drive circuit with high speed, low delay and wide output voltage range is designed which can meet the driving requirements of GaN and SiC FETs in this paper. In order to improve the switching frequency and reduce the input/output delay a high speed output drive circuit with a wide gate voltage range and a low delay OOK TX/RX circuit are proposed. A 10 MHz capacitive isolated gate driver IC with output current of 4 A and output gate voltage of 5 V-25 V is realized in 180 nm BCD process. The test results show that the gate driver achieves the rise and fall time of 1.0 ns and 1.5 ns respectively under 5.0 V supply, and the rise and fall time of 2.5 ns and 3.2 ns respectively under 25 V supply with 10 MHz frequency, and the delay time is 22.5 ns and 25 ns respectively for 5.0 V and 25 V supply.