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<p>This paper presents the design and implementation of a 19.5&#xa0;GHz active phase shifter for beamforming. The proposed circuit is based on an original architecture using an Injection-Locked Voltage-Controlled Oscillator (ILVCO) associated with a polyphase filter and followed by a phase selection circuit. This phase shifter is synthesized using the phase selection circuit (PS) for coarse adjustment in the steps of 90° and the injection-locked VCO for a fine-tuning adjustment between ± 45°. According to the post-layout simulation results, the frequency tuning range of the VCO varies from 17.89 to 20.16&#xa0;GHz in free-running mode. This behaviour allows to obtain a phase shift range of 360° with an injected signal having a power of -8.5 dBm and a frequency of 19.5&#xa0;GHz. In these conditions, from a 1.3&#xa0;V supply voltage, the full circuit draws a current of 20.47&#xa0;mA and the mean output power is equal to − 15.58 dBm on&#xa0;50 Ω load. The proposed circuit is implemented in a BiCMOS SiGe:C 0.13&#xa0;μm process and the whole layout has an area of 1.51 mm<sup>2</sup> including all the pads.</p>

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Analysis and design of an innovative 19.5 GHz active phase shifter architecture, implemented in a 0.13 μm BiCMOS SiGe:C process, for beamforming in 5G applications

  • 期刊论文

  • 发表日期：

    2025年4月7日

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  • Nuraddeen Ado Muhammad,
  • David Cordeau,
  • Jean-Marie Paillot

摘要

This paper presents the design and implementation of a 19.5 GHz active phase shifter for beamforming. The proposed circuit is based on an original architecture using an Injection-Locked Voltage-Controlled Oscillator (ILVCO) associated with a polyphase filter and followed by a phase selection circuit. This phase shifter is synthesized using the phase selection circuit (PS) for coarse adjustment in the steps of 90° and the injection-locked VCO for a fine-tuning adjustment between ± 45°. According to the post-layout simulation results, the frequency tuning range of the VCO varies from 17.89 to 20.16 GHz in free-running mode. This behaviour allows to obtain a phase shift range of 360° with an injected signal having a power of -8.5 dBm and a frequency of 19.5 GHz. In these conditions, from a 1.3 V supply voltage, the full circuit draws a current of 20.47 mA and the mean output power is equal to − 15.58 dBm on 50 Ω load. The proposed circuit is implemented in a BiCMOS SiGe:C 0.13 μm process and the whole layout has an area of 1.51 mm2 including all the pads.